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Gopalakrishnan Nair, A.

Publications and source records attributed to Gopalakrishnan Nair, A..

2 recordsLinked to original sources

Structural compatibility enables functional co-assembly of Kir2.1 channels and the voltage-sensing domain of voltage-sensitive phosphatases

Voltage-sensing domains (VSDs), which are integral parts of voltage-gated K+ channel (KV) proteins, are highly modular protein components that function largely independently of ion-conducting pores - a property exploited in genetically encoded voltage indicators (GEVIs). Conversely, inward-rectifier K+ channels such as Kir2.1 possess a pore-only architecture and lack a VSD. Here, we demonstrate an unexpected and functionally relevant structural compatibility between the independently evolved pore-only and VSD-only membrane protein families. When co-expressed, Kir2.1 and ASAP-type GEVIs form complexes that constrain VSD movement and markedly interfere with voltage-dependent fluorescence responses. Molecular modeling combined with targeted mutagenesis identified a conserved hydrophobic interface that mediates this interaction. A single bulky substitution in the VSD of the GEVI rEstus-NI (A79W) disrupted the impact of Kir2.1 while preserving the GEVIs voltage-sensing performance. These findings suggest that pore-only and VSD-only proteins can assemble into functional KV-like architectures, and highlight that membrane proteins may engage in unexpected interactions capable of altering experimental readouts in physiological voltage imaging studies. The study also raises the possibility that independently functional membrane proteins may assemble into previously unrecognized higher-order complexes with distinct functional properties under native physiological conditions.

physiology↗

Absolute Membrane Potential Recording with ASAP-Type Genetically Encoded Voltage Indicators Using Fluorescence Lifetime Imaging

The electrical membrane voltage (Vm) characterizes the functional state of biological cells, thus requiring precise, non-invasive Vm-sensing techniques. While voltage-dependent fluorescence intensity changes from genetically encoded voltage indicators (GEVIs) indicate Vm changes, variability in sensor expression confound determination of absolute Vm. Fluorescence lifetime imaging microscopy (FLIM) promises a solution to this problem, as fluorescence lifetime is expected to be unaffected by sensor expression and excitation intensity. By examining ASAP1, ASAP3, JEDI-1P, rEstus, and rEstus-NI (G138N:T141I) with one-photon excited FLIM measurements, we demonstrate that all sensors display a voltage-dependent lifetime. With the highest lifetime change in the Vm range of -100 to 50 mV of about 730 ps, ASAP3 and rEstus-NI are preferred for FLIM recordings. At a physiologically relevant Vm of -30 mV, the voltage sensitivity of rEstus-NI (6.6 ps/mV) is 3.6 and 1.4 times greater than that of ASAP1 and rEstus, respectively. As a proof of concept, we successfully used rEstus-NI to estimate absolute resting Vm in HEK293T, A375 melanoma, and MCF7 breast cancer cells and quantified spontaneous Vm fluctuations in A375 cells. O_FIG O_LINKSMALLFIG WIDTH=200 HEIGHT=89 SRC="FIGDIR/small/669310v1_ufig1.gif" ALT="Figure 1"> View larger version (26K): org.highwire.dtl.DTLVardef@1eaff8borg.highwire.dtl.DTLVardef@12f1a54org.highwire.dtl.DTLVardef@169ad83org.highwire.dtl.DTLVardef@fe9f44_HPS_FORMAT_FIGEXP M_FIG C_FIG

physiology↗